| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-79
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2013-0092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2013-0078
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2013-0045 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C8-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0097
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-004 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C13-00 |
| filingDate |
2021-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3dbcbc1823f4b6e04b111ac8544d7541
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f709104211b0ef10da3f81249554ce1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9aa5f170f85c55e86d789d64054ae91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06da8676760d39c4adbf2cf62dd68a1a |
| publicationDate |
2022-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2022270680-A1 |
| titleOfInvention |
Technologies for controlling current through memory cells |
| abstract |
Techniques for controlling current through memory cells is disclosed. In the illustrative embodiment, a fine-grained current source and a coarse-grained current source can both be activated to perform an operation on a phase-change memory cell. The coarse-grained current source is briefly activated to charge up the capacitance of an electrical path through the memory cell and then turned off. The fine-grained current source applies a current pulse to perform the operation on the memory cell, such as a reset operation. By charging up the electrical path quickly with the coarse-grained current source, the fine-grained current source can quickly perform the operation on the memory cell, reducing the thermal disturbance caused by the operation on nearby memory cells. |
| priorityDate |
2021-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |