http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022262826-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6c4305ec3205b30f4303a738aa5cda7d http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6ab483c733ecde6d000cee17f985cf65 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-127 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate | 2020-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cdcb20cddadd9d85dd26477f14b203ed http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a41ca1bef46a9363f0d1635517dd90e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2505b8a772bdc218ff313cb71e4d8067 |
| publicationDate | 2022-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2022262826-A1 |
| titleOfInvention | Method of manufacturing thin film transistor and display device |
| abstract | A method of manufacturing a thin film transistor and a display device are disclosed. The method includes: forming a gate metal layer, a gate insulating layer, an active layer, an ohmic contact layer sequentially on a substrate; producing a photoresist layer on the metal layer where the portion of the photoresist layer at the channel region has a smaller thickness than other portions; a first wet etching in which the metal layer corresponding to the photoresist layer is obtained; a first drying etching in which the active layer and ohmic contact layer corresponding to the photoresist layer are Obtained; a second wet etching in which the portion of the metal layer corresponding to the channel region removed; and a second dry etching in which the portion of the active layer corresponding to the channel region is made to have a smaller thickness than other portions of the active layer. |
| priorityDate | 2019-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 68.