| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-231
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-823 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-2259
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B51-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-845
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B51-10 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 |
| filingDate |
2021-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e74b892aab6880b642898cb7271c6c4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_148ccb70a31b774cd1052eac545be7c4 |
| publicationDate |
2022-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2022231026-A1 |
| titleOfInvention |
Hybrid memory device and method of forming the same |
| abstract |
A memory array includes hybrid memory cells, wherein each hybrid memory cell includes a transistor-type memory including a memory film extending on a gate electrode; a channel layer extending on the memory film; a first source/drain electrode extending on the channel layer; and a second source/drain electrode extending along the channel layer; and a resistive-type memory including a resistive memory layer, wherein the resistive memory layer extends between the second source/drain electrode and the channel layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022208260-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022238171-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11749341-B2 |
| priorityDate |
2021-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |