| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_23a4e0c875bf1ac2b8a3b76517de6c7d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-113 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-471
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G73-1039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-484
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L79-08 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G73-10 |
| filingDate |
2021-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae1953287cb3e666cd7afe62cdbf75ba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29fb0e9b4da34fc6e14ef08152d5d98e |
| publicationDate |
2022-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2022223808-A1 |
| titleOfInvention |
Polyimide-based transistor devices and methods of fabricating the same |
| abstract |
A transistor device that includes a substrate comprising metallic gate contacts, a dielectric layer on the substrate comprising a polyimide or derivative thereof, a semiconductor layer on the dielectric layer comprising a semiconducting polymer confined in a host matrix material comprising a polyimide or derivative thereof, and source and drain contacts on the semiconductor layer. |
| priorityDate |
2020-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |