http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022223420-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b5b43f4a86fc8f7ad28689d833acac53 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28185 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225 |
| filingDate | 2021-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c68c225a46c4dcde817d873521963aeb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0bfba05631b1746c5c4d2fa501883c0b |
| publicationDate | 2022-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2022223420-A1 |
| titleOfInvention | Manufacturing method for semiconductor structure, and semiconductor structure |
| abstract | A manufacturing method for a semiconductor structure includes: a substrate is provided, the substrate including a first region and a second region; a dielectric layer is formed on the substrate; a first diffusion film layer having a first metal oxide layer is formed on the dielectric layer; the first diffusion film layer corresponding to the second region is removed; a second diffusion film layer is formed on the dielectric layer corresponding to the second region, the second diffusion film layer including a second metal oxide layer interfacing with the dielectric layer; and an annealing treatment is performed to diffuse a first metal element in the first metal oxide layer into the dielectric layer corresponding to the first region and diffuse a second metal element in the second metal oxide layer into the dielectric layer corresponding to the second region. |
| priorityDate | 2021-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.