| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8e0bf0928b608797b70bbc2b91c7e52e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D3-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-5022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-3281
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D3-3454
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D11-0047
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D3-0073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0206 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D3-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D3-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D7-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D11-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-00 |
| filingDate |
2020-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9599027b1a642963a92c0e2db240b6c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e82d19c7fe263e92df99113f575926b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73bec7cfc75d4b30191d55a429748692
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3140a7aced92bc10cc0ca7f48c85b893
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8a2718e8ce757c14e27287b218c78c6 |
| publicationDate |
2022-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2022220421-A1 |
| titleOfInvention |
Composition and process for electively etching a hard mask and/or an etch-stop layer in the presence of layers of low-k materials, copper, cobalt and/or tungsten |
| abstract |
Described herein is a method of using a cleaning composition in combination with one or more oxidants for removing post-etch or post-ash residue from the surface of a semiconductor substrate and/or for oxidative etching or partially oxidative etching of a layer or mask. Also described herein is the cleaning composition and a method of using the cleaning composition for removing post-etch or post-ash residue from the surface of a semiconductor substrate. Also described herein is a wet-etch composition including the cleaning composition and one or more oxidants as well as a method of using the wet-etch composition. Also described herein are a process for the manufacture of a semiconductor device from a semiconductor substrate and a kit including the cleaning composition and one or more oxidants. |
| priorityDate |
2019-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |