| abstract |
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate having a first surface and a second surface opposite thereto. A gallium nitride (GaN)-based device layer is formed on the first surface of the semiconductor substrate and has source, drain, and gate contact regions. First, second, and third through-substrate vias (TSVs) pass through the semiconductor substrate and are respectively electrically connected to the source, drain, and gate contact regions. An insulating liner layer is formed on the second surface of the semiconductor substrate and extends into the semiconductor substrate to separate the second and third TSVs from the semiconductor substrate. A semiconductor package assembly including the semiconductor device structure is also provided. |