| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8381805eba6d034fc77bd230dd02e6e2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-52 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-823
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1616
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1206 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate |
2021-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_13bae4ea74d53a67d3c3f6bd2179f162
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75e262f620203199c381028cbb6df18a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2161fd495e05b9efd5a5c1af711b82d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20bfe3d54a72cd9ff86fcab22c93d957 |
| publicationDate |
2022-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2022209107-A1 |
| titleOfInvention |
Cmos-compatible protonic resistive devices |
| abstract |
Described are CMOS-compatible protonic resistive devices (e.g., processing elements and/or memory elements). In embodiments, a protonic resistive memory can be formed from a proton-sensitive metal oxide channel where the concentration of protons intercalated inside the layer is controlled to modulate its conductivity. The protons can initially be supplied to the material stack by an implantation method. Irradiation techniques can be implemented to increase the concentration and conductivity of protons inside the materials. Some designs can put the active layer and reservoir in direct contact, creating an electrolyte-free device. Designs provide scalable solutions for full-scale Si-integration. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022271221-A1 |
| priorityDate |
2020-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |