Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_20824843967f03a50b2f5a55fd256cd4 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0607 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0878 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7811 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66734 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
filingDate |
2021-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55c6282bd7c9722c88f2fb8bdf75b668 |
publicationDate |
2022-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2022209004-A1 |
titleOfInvention |
Semi-SGT MOSFET Device and Method for Making the Same |
abstract |
The present application discloses a semi-SGT MOSFET device, comprising: doped first and second epitaxial layers of a first conductivity type formed on a semiconductor substrate. The semi-SGT MOSFET device is divided into an active region and a terminal region. The first epitaxial layer is divided into a first region located in the active region and a second region located in the terminal region, and doping concentrations of the first region and the second region are configured individually. The doping concentration of the second epitaxial layer is higher than the doping concentration of the first region, and the doping concentration of the second region is lower than the doping concentration of the first region, so that the second region can be fully depleted when the device is reversely biased, thereby increasing the withstand voltage of the terminal region. The present application further discloses a method for manufacturing the semi-SGT MOSFET device. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-116130522-A |
priorityDate |
2020-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |