| abstract |
The invention discloses a MEMS pressure sensor, which includes a bulk silicon layer, a buried oxygen layer, a substrate, a varistor, a first passivation layer, an electrode layer, and a second passivation layer. The varistor is located on the upper surface of the buried oxygen layer, and the first passivation layer is a rectangular shell located on the upper surface of the buried oxygen layer; there is a through hole in the center of the top of the rectangular shell; the first passivation layer covers the varistor, and the gap between the first passivation layer and the varistor forms an isolation cavity. The electrode layer is located on the upper surface of the first passivation layer and is connected with the varistor via the through hole. The second passivation layer is located on the upper surface of the electrode layer. |