| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_98a75c9fff239084cf3c988c59841957 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-80 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4408
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-12 |
| filingDate |
2020-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4cc871732eaafe346d8f591c5661b8a1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc81ed8b6d37e085af736bd1b0f14149
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa3860109b25292eac689fe294b85919
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc08a0a245241c2fac9367e0ff3a6b62 |
| publicationDate |
2022-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2022178028-A1 |
| titleOfInvention |
Organoaminodisilazanes for high temperature atomic layer deposition of silicon oxide thin films |
| abstract |
An atomic layer deposition (ALD) process for formation of silicon oxide at a temperature greater than 500° C. is performed using at least one organoaminodisilazane precursor having the following Formula I: n n n n n n n n n n wherein R 1 and R 2 are each independently selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, and a C 6 to C 10 aryl group with a proviso that R 1 and R 2 cannot be both hydrogen; R 3 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, and a C 6 to C 10 aryl group; and either R 1 and R 2 are linked to form a cyclic ring structure or R 1 and R 2 are not linked to form a cyclic ring structure. |
| priorityDate |
2019-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |