Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_58054227722081749d7e8e121924a5c8 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B1-0233 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67103 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G05D23-1931 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
filingDate |
2022-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d837beb7920f152f0a81eb7b9536860b |
publicationDate |
2022-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2022172957-A1 |
titleOfInvention |
Semiconductor manufacturing apparatus and method of manufacturing semiconductor device |
abstract |
In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes etching the first film with first gas including carbon and fluorine to form a concave portion in the first film and form a second film in the concave portion. The method further includes treating the second film by using the second film to second gas or second liquid, wherein the second film is treated without plasma. |
priorityDate |
2020-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |