| abstract |
Disclosed is a technology of preferentially forming an ohmic contact layer and a conductor layer before separating a nanorod light emitting diode (LED) from a substrate, thereby being capable of omitting a heat treatment process performed at high temperature after aligning the nanorod LED, and, accordingly, preventing electrical short while maximizing the quantum efficiency of the nanorod LED and increasing a selection range of a material constituting a light emitting diode (LED) display. More particularly, the nanorod LED includes a first semiconductor layer; a multi-quantum well structure layer; a second semiconductor layer; and a conductor layer formed on at least one semiconductor layer of the first semiconductor layer and the second semiconductor layer, wherein a length and shape of the conductor layer are controlled such that the multi-quantum well structure layer is disposed between two electrodes of the electrode pattern on which the conductor layer is to be aligned. |