http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022165629-A1

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filingDate 2021-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2022-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2022165629-A1
titleOfInvention Silicon carbide semiconductor device, semiconductor package, and method of inspecting silicon carbide semiconductor device
abstract A portion of a source pad is exposed in an opening of a passivation film. In the exposed portion of the source pad, a wiring region in which a package wiring member is to be bonded and a probe region that is a region different from the wiring region are provided. The probe region has a probe mark of a probe for an energization inspection. An area of the probe mark that overlaps the wiring region is at most 30% of an entire area of the wiring region in a plan view of the silicon carbide semiconductor device.
priorityDate 2020-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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