| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fefa1923da0d7b9d6a1b27cbc2797fb2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H2003-021 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-02125
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-02031
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-173
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H3-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-02015
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-176 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H3-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H9-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H9-17
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H9-02 |
| filingDate |
2021-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb0776be32c164cc4a614f2f836ce7ae |
| publicationDate |
2022-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2022131527-A1 |
| titleOfInvention |
Fbar structure having single crystalline piezoelectric layer and fabricating method thereof |
| abstract |
A film bulk acoustic resonator (FBAR) structure includes a bottom cap wafer, a piezoelectric layer disposed on the bottom cap wafer, the piezoelectric layer including a single crystalline piezoelectric material, a bottom electrode disposed below the piezoelectric layer; a top electrode disposed above the piezoelectric layer; and a cavity disposed below the bottom electrode. |
| priorityDate |
2021-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |