| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9884b2360f2413d7edea0d5af39f775a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2059
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-4031
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04256 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34333
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0421
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02476 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-62 |
| filingDate |
2020-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36340484123ed7931a9cb938f0af3cdd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4d5cbbdfd1a0b88a5f845c817e426e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a728299aca26c35d323f954a81fc425d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bafd7c82b6fd1dd34adeef3e9b16c34 |
| publicationDate |
2022-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2022131341-A1 |
| titleOfInvention |
Semiconductor laser diode and method for producing a semiconductor laser diode |
| abstract |
The invention relates to a semiconductor laser diode, which comprises a semiconductor layer sequence grown in a vertical direction and having an active layer that is configured and provided to generate light during operation in at least one active region extending in a longitudinal direction, and which comprises a transparent electrically conductive cover layer on the semiconductor layer sequence, wherein the semiconductor layer sequence terminates in a vertical direction with a top side, and the top side has a contact region arranged in the vertical direction above the active region and at least one cover region directly adjoining the contact region in a lateral direction perpendicular to the vertical and longitudinal directions, the cover layer is applied contiguously to the contact region and the at least one cover region on the top side, the cover layer is applied directly to the top side of the semiconductor layer sequence at least in the at least one cover region, and at least one element defining the at least one active region is present which is covered by the cover layer. The invention further relates to a method of manufacturing a semiconductor laser diode. |
| priorityDate |
2019-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |