| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0676
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| filingDate |
2020-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf0514583c163e50afcbf9f7d209e435
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0197b8d94a1e39b2fcf94f79a4fb5e1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0818a3fe7837f2e02467ebdc9ccfdf22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7a91be9d9f5a07dd7c9949e13babf35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8fa18c383b22b60cd1b5716b98aa133b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68530279f472b651381ad91992671368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2eb2fc93416ca74a6eb4b101624b6312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9eba497638820efb286f211f6f047230
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eda852a725164dc9b71794b1c8825182
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c08a6ae6344fa17f6def5ba0b6674cc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4fc0025682c8adb27c90d36fb33f1e1a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d3904a0dfc4d66ed0a9822618a728fd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33e43af9089ad48a8cdaeffb4c4bc27f |
| publicationDate |
2022-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2022093589-A1 |
| titleOfInvention |
Fabrication of gate-all-around integrated circuit structures having adjacent island structures |
| abstract |
Gate-all-around integrated circuit structures having adjacent island structures are described. For example, an integrated circuit structure includes a semiconductor island on a semiconductor substrate. A first vertical arrangement of horizontal nanowires is above a first fin protruding from the semiconductor substrate. A channel region of the first vertical arrangement of horizontal nanowires is electrically isolated from the fin. A second vertical arrangement of horizontal nanowires is above a second fin protruding from the semiconductor substrate. A channel region of the second vertical arrangement of horizontal nanowires is electrically isolated from the second fin. The semiconductor island is between the first vertical arrangement of horizontal nanowires and the second vertical arrangement of horizontal nanowires. |
| priorityDate |
2020-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |