| abstract |
Provided is a barrier film, comprising:a base layer; andan inorganic layer including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, and having a compactness expressed through an etching rate of 0.17 nm/s or less in the thickness direction for an Ar ion etching condition to etch Ta2O5 at a rate of 0.09 nm/s,wherein the second region has a higher elemental content of N than that of the first region,the first region has a thickness of 50 nm or more, andthe ratio (d1/d2) of the thickness (d1) of the first region to the thickness (d2) of the second region is 2 or less,the barrier film having excellent barrier properties and optical properties. The barrier film can be used for electronic products sensitive to moisture or the like. |