http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022049373-A1
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f1a53653837487c9779e58d9f167c58b |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0635 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-066 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06 |
filingDate | 2021-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8b22e98ed47db36df16be021e304a1b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e509b501b78a75943d802c32c5113f1 |
publicationDate | 2022-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | US-2022049373-A1 |
titleOfInvention | Sic single crystal(s) doped from gas phase |
abstract | An apparatus for sublimation growth of a doped SiC single crystal includes a growth crucible, an envelope, a heater, and a passage for introducing into the envelope from a source outside the envelope a doping gas mixture. The gas mixture includes a gaseous dopant precursor that, in response to entering a space between the growth crucible and the envelope, undergoes chemical transformation and releases into the space between the growth crucible and the envelope dopant-bearing gaseous products of transformation which penetrate the wall of the crucible, move into the crucible, and absorb on a growth interface of a growing SiC crystal thereby causing doping of the growing crystal. A sublimation growth method is also described. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115142123-A |
priorityDate | 2020-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.