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filingDate 2021-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8b22e98ed47db36df16be021e304a1b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e509b501b78a75943d802c32c5113f1
publicationDate 2022-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2022049373-A1
titleOfInvention Sic single crystal(s) doped from gas phase
abstract An apparatus for sublimation growth of a doped SiC single crystal includes a growth crucible, an envelope, a heater, and a passage for introducing into the envelope from a source outside the envelope a doping gas mixture. The gas mixture includes a gaseous dopant precursor that, in response to entering a space between the growth crucible and the envelope, undergoes chemical transformation and releases into the space between the growth crucible and the envelope dopant-bearing gaseous products of transformation which penetrate the wall of the crucible, move into the crucible, and absorb on a growth interface of a growing SiC crystal thereby causing doping of the growing crystal. A sublimation growth method is also described.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115142123-A
priorityDate 2020-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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