| abstract |
Provided are compositions and methods for selectively etching titanium nitride, generally leaving molybdenum present unaffected by the process, as well as any aluminum oxide, silicon dioxide, and polysilicon which may be present on the device. In general, the compositions of the invention were able to achieve titanium nitride etch rates exceeding 3.5 Å/minute, thereby providing uniform recess top and bottom layers in patterns. |