| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_98a75c9fff239084cf3c988c59841957 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05D3-067
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05D1-62 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-448
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-0834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02351
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2021-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_798579847cc0dd876163cd10effc8861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_188defd48490e70eee1f39ee7ae27955
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e88dbaee8a6e9dbc283a5b316ba7d8b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56c69175a0c33544585b18d6f2da028f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce1ae0a5dfc1897e24f2f1474eef1f12 |
| publicationDate |
2022-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2022044928-A1 |
| titleOfInvention |
Silicon compounds and methods for depositing films using same |
| abstract |
A chemical vapor deposition method for producing a dielectric film, the method comprising: providing a substrate into a reaction chamber; introducing gaseous reagents into the reaction chamber wherein the gaseous reagents comprise a silicon precursor comprising an silicon compound having Formula I as defined herein and applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film. |
| priorityDate |
2018-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |