http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022036940-A1

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-221
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-4094
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filingDate 2020-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d9246318b4ecbef0af0c975a319fc29
publicationDate 2022-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2022036940-A1
titleOfInvention Apparatuses and methods including memory cells, digit lines, and sense amplifiers
abstract Apparatuses and methods including memory cells, digit lines, and sense amplifiers are described. An example apparatus includes a pair of digit lines including first and second digit lines, a sense amplifier coupled to the pair of digit lines and configured to amplify a voltage difference between the first and second digit lines when activated, and a plurality of memory cells. A memory cell of the plurality of memory cells includes a first node coupled to the first digit line and includes a second node coupled to the second digit line. The memory cell of the plurality of memory cells is configured to store a respective voltage and/or charge at a respective cell node and couple the respective voltage and/or charge to the first node when activated.
priorityDate 2020-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 22.