| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cbffa3b81b3b862dc7220b5648f5f745 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8836
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06N3-049
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06N3-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-881
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06N3-065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06N3-063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-685 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06N3-063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate |
2021-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95d2273684f1169a7aaf8b193811356f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a522e06917d01d751f938e499c0763e |
| publicationDate |
2022-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2022036168-A1 |
| titleOfInvention |
Ion controllable transistor for neuromorphic synapse device and manufacturing method thereof |
| abstract |
Disclosed is an ion controllable transistor-based neuromorphic synaptic device used for a memory and a neuromorphic computing in such a manner that a synaptic weight is analogically updated and maintained. The ion controllable transistor-based neuromorphic synaptic device includes a channel area formed on a semiconductor substrate; a source area and a drain area formed at both sides of the channel area, respectively; an interlayer insulating film provided on the channel area; a gate area formed on the interlayer insulating film; and a solid electrolyte layer inserted between the interlayer insulating film and the gate area. |
| priorityDate |
2020-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |