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filingDate 2020-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2021-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2021408251-A1
titleOfInvention Semiconductor device with t-shaped buried gate electrode and method for forming the same
abstract The present disclosure provides a semiconductor device with a T-shaped buried gate electrode and a method for forming the semiconductor device. The semiconductor device includes a semiconductor substrate having an active region, and a first gate electrode disposed in the semiconductor substrate. The semiconductor device also includes a first source/drain region and a second source/drain region disposed in the active region and at opposite sides of the first gate electrode. The first gate electrode has a first portion extending across the active region and a second portion extending into the first source/drain region.
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Total number of triples: 33.