| abstract |
A magnetoresistive element of the present disclosure includes a multilayer structure made up of at least a fixed magnetization layer, an intermediate layer and a storage layer. A first side wall is formed on a side wall of the multilayer structure. A second side wall is formed on the first side wall. The first side wall is made of an insulating material, for instance SiN or AlOx, that prevents intrusion of hydrogen. The second side wall is made of a hydrogen storage material, for instance titanium. |