| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_32681f1832d227fe8df23d12a37f67a8 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B41-5032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B41-87
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32504
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B41-5045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-62222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32495
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-44 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
| filingDate |
2021-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ce6138a45d73453c2987a2e97587d88
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a70bd8530dd552fdf76233aecd261119 |
| publicationDate |
2021-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2021343511-A1 |
| titleOfInvention |
Composite structure and semiconductor manufacturing apparatus including composite structure |
| abstract |
Disclosed is to provide a composite structure used as a member for a semiconductor manufacturing apparatus as well as a semiconductor manufacturing apparatus. A composite structure including a base material and a structure that is provided on the base material and has a surface to be exposed to a plasma atmosphere, in which the structure has an yttrium-aluminum oxide as a main component, and has a lattice constant a calculated by the following formula (1) being larger than 12.080 Å:a=d·(h2+k2+l2)1/2 (1)where d represents a lattice plane spacing, and (hkl) represents a Miller index. This structure features excellent low-particle generation and is suitably used a member for a semiconductor apparatus. |
| priorityDate |
2020-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |