| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L33-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L25-08 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0388
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F212-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D133-066
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D125-18 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
| filingDate |
2021-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd33287fcbfcc0d02e57b74a562f1f7b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fee656cdfd4e1cfc97b65693288e942d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27f2f4d9898687d9d326a4df1bf5010f |
| publicationDate |
2021-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2021341837-A1 |
| titleOfInvention |
Resin, photoresist composition, and method of manufacturing semiconductor device |
| abstract |
A method for manufacturing a semiconductor device includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a patterned photoresist. The photoresist composition includes a photoactive compound and a resin comprising a radical-active functional group and an acid labile group. |
| priorityDate |
2020-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |