| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3341 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2020-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31c1b4d35e7cc3921ac37d4755bc9fd5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55366b45de685e57e69254b1f8f12eb4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_861a4ce896855029d8a15888492504bc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_170a4f9b11799371742d49469629e6f4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a96ac0a8a5f47337f4080682e6c12484
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_788f377c566dcca5411a60818e95c1cd |
| publicationDate |
2021-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2021320012-A1 |
| titleOfInvention |
Methods and apparatus for in-situ protection liners for high aspect ratio reactive ion etching |
| abstract |
Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching. In some embodiments, a method comprises flowing acetylene gas into a process chamber to produce a diamond like carbon deposition on a pattern mask or on at least one layer of oxide or nitride on the substrate, flowing a gas mixture of a first gas of a hydrofluorocarbon-based gas and a second gas of a fluorocarbon-based gas into the process chamber, forming a plasma from the gas mixture using an RF power source and at least one RF bias power source, performing an anisotropic etch of the at least one layer of oxide or nitride on the substrate using the pattern mask, and evacuating the process chamber while interrupting the RF power source to stop plasma formation. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11437241-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022285408-A1 |
| priorityDate |
2020-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |