| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-5096
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2020-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69ff4355441743ba0ea68147764f271c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d786bc2dea8f15c50971bb8618d9807a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_919a0708f998037ba9d584c8b65eca12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aba506ff3c2d48983e9cc2eacb5c199e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d4faee13965f78eb46e1d7e0c594d29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a0a335c982b4ff9dc6bf07a8a25ae62 |
| publicationDate |
2021-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2021272800-A1 |
| titleOfInvention |
Systems and methods for depositing low-k dielectric films |
| abstract |
Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0. |
| priorityDate |
2020-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |