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filingDate 2018-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68443944e81f31fcf28a95ac5ec9c29a
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publicationDate 2021-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2021265602-A1
titleOfInvention Vapor deposition mask, method for manufacturing vapor deposition mask, and method for manufacturing organic semiconductor element
abstract A vapor deposition mask ( 100 ) including: a magnetic metal member ( 20 ) including at least one first opening ( 25 ); and a layered member ( 30 ) that is arranged on the magnetic metal member ( 20 ) so as to cover the at least one first opening ( 25 ) and has a plurality of second openings ( 13 ) located in the at least one first opening ( 25 ), wherein: the layered member ( 30 ) includes a first layer (m 1 ) and a second layer (m 2 ) that is arranged between the first layer (m 1 ) and the magnetic metal member ( 20 ); and in the at least one first opening ( 25 ), at a first temperature that is greater than or equal to room temperature, an elastic modulus E1 of the first layer, a thickness a1 of the first layer, an internal stress σ1 of the first layer, an elastic modulus E2 of the second layer, a thickness a2 of the second layer and an internal stress σ2 of the second layer (where σ1 and σ2 are positive for tensile stress) satisfy Expressions (1) and (2) below: n σ1/ E 1−σ2/ E 2<0  (1)n n 0< a 1×σ1+ a 2×σ2  (2).
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