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publicationDate 2021-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2021249274-A1
titleOfInvention Efficient cleaning and etching of high aspect ratio structures
abstract A method for treating a substrate includes arranging a substrate in a processing chamber. At least one of a vaporized solvent and a gas mixture including the solvent is supplied to the processing chamber to form a conformal liquid layer of the solvent on exposed surfaces of the substrate. The at least one of the vaporized solvent and the gas mixture is removed from the processing chamber. A reactive gas including a halogen species is supplied to the processing chamber. The conformal liquid layer adsorbs the reactive gas to form a reactive liquid layer that etches the exposed surfaces of the substrate.
priorityDate 2018-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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