| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2fb272959740a2231f287ac6bf4d190a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45578
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4584
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45504
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02312 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate |
2021-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d286119d8b06829f33127c7817ba4cde
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d80a69369af41e5cc3fb9a64426ce2da |
| publicationDate |
2021-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2021246554-A1 |
| titleOfInvention |
Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device |
| abstract |
Described herein is a technique capable of suppressing a deviation in a thickness of a film formed on a substrate. According to one aspect of the technique of the present disclosure, a substrate processing apparatus includes a substrate retainer capable of supporting substrates; a cylindrical process chamber including a discharge part and supply holes; partition parts arranged in the circumferential direction to partition supply chambers communicating with the process chamber through the supply holes; nozzles provided with an ejection hole; and gas supply pipes. The supply chambers includes a first nozzle chamber and a second nozzle chamber, the process gas includes a source gas and an assist gas, the nozzles includes a first nozzle for the assist gas flows and a second nozzle disposed in the second nozzle chamber and through which the source gas flows, and the first nozzle is disposed adjacent to the second nozzle. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11725281-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11542603-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020407848-A1 |
| priorityDate |
2018-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |