| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78642 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2020-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9109b68b55594387713c374f294c46cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b90232432b1b2a1f0cdb01aa84d55af9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d05f1f86d9fa7250567755f12c7d0d53
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54d544ab09c594f707869b59c30663df |
| publicationDate |
2021-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2021217896-A1 |
| titleOfInvention |
Controlled bottom junctions |
| abstract |
A method of forming a vertical transport field effect transistor (VTFET) is provided. The method includes forming one or more vertical fins on a substrate, wherein there is a fin transition region between each of the one or more vertical fins and the substrate. The method further includes forming a sidewall liner having a first thickness on each of the one or more vertical fins. The method further includes forming a sidewall spacer having a second thickness on each of the sidewall liner(s), wherein the first thickness of the sidewall liner and the second thickness of the sidewall spacer determines an offset distance from each of the one or more vertical fins. The method further includes forming a trench with an edge offset from each of the one or more vertical fins by the offset distance. |
| priorityDate |
2020-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |