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filingDate 2019-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2021-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2021193584-A1
titleOfInvention Methods of forming a conductive contact structure to an embedded memory device on an ic product and a corresponding ic product
abstract One illustrative device disclosed herein includes a layer of insulating material having an upper surface positioned at a first level and a recessed conductive interconnect structure positioned at least partially within the layer of insulating material, wherein the recessed conductive interconnect structure has a recessed upper surface that is positioned at a second level that is below the first level. In this example, the device also includes a recess defined in the recessed conductive interconnect structure, a memory cell positioned above the recessed conductive interconnect structure and a conductive via plug that is conductively coupled to the recessed conductive interconnect structure and a lower conductive material of the memory cell, wherein at least a portion of the conductive via plug is positioned in the recess defined in the recessed conductive interconnect.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2023180618-A1
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