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filingDate 2021-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2021-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2021184037-A1
titleOfInvention MOS Devices Having Epitaxy Regions with Reduced Facets
abstract An integrated circuit structure includes a gate stack over a semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the opening is adjacent to the gate stack. A first silicon germanium region is disposed in the opening, wherein the first silicon germanium region has a first germanium percentage. A second silicon germanium region is over the first silicon germanium region. The second silicon germanium region comprises a portion in the opening. The second silicon germanium region has a second germanium percentage greater than the first germanium percentage. A silicon cap substantially free from germanium is over the second silicon germanium region.
priorityDate 2013-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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