Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02192 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28185 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
filingDate |
2019-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d57e4425bc0461df51037f8e696711ff http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f166073911b23bbefca64a815bc29f4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ead3cf4954e6842f2889fec9b743b5ce http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e144ed6162d81c675ad785c5cbf14a1 |
publicationDate |
2021-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2021098457-A1 |
titleOfInvention |
Multi-threshold gate structure with doped gate dielectric layer |
abstract |
The present disclosure describes a semiconductor device that includes a semiconductor device that includes a first transistor having a first gate structure. The first gate structure includes a first gate dielectric layer doped with a first dopant at a first dopant concentration and a first work function layer on the first gate dielectric layer. The first gate structure also includes a first gate electrode on the first work function layer. The semiconductor device also includes a second transistor having a second gate structure, where the second gate structure includes a second gate dielectric layer doped with a second dopant at a second dopant concentration lower than the first dopant concentration. The second gate structure also includes a second work function layer on the second gate dielectric layer and a second gate electrode on the second work function layer. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022320318-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11699735-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021384313-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021183857-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11264289-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11393916-B2 |
priorityDate |
2019-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |