| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-08123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05655
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05647
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-03452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-03616
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0391
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-08057
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-08225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-08146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-08121
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80357 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04B1-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-535
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0657 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-535
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04B1-40 |
| filingDate |
2019-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c6c0f460052d20e2044e2b6ce130d9c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb1b1a168b00be8362792fe160de8f14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2d680bba26e7017fc839bb61f6493b7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7df72410013371d1a47b0b76a504e864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d354b852ff5ddfa4c0cb6e6fc1f50dad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dada8fdddb41f9668bca9f9ac9d5958
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9b648e6e87bc994cd1b27645ec4d1a7d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60a22969db8ab77fc968b98f80a2b7c8 |
| publicationDate |
2021-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2021098360-A1 |
| titleOfInvention |
Nterconnect structures and methods of fabrication |
| abstract |
An integrated circuit interconnect structure includes a first interconnect in a first metallization level and a first dielectric adjacent to at least a portion of the first interconnect, where the first dielectric having a first carbon content. The integrated circuit interconnect structure further includes a second interconnect in a second metallization level above the first metallization level. The second interconnect includes a lowermost surface in contact with at least a portion of an uppermost surface of the first interconnect. A second dielectric having a second carbon content is adjacent to at least a portion of the second interconnect and the first dielectric. The first carbon concentration increases with distance away from the lowermost surface of the second interconnect and the second carbon concentration increases with distance away from the uppermost surface of the first interconnect. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022231012-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11521896-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022344294-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I787086-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2023197656-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-4195244-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11502058-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11587895-B2 |
| priorityDate |
2019-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |