http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021083161-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-48
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-483
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-62
filingDate 2019-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3333b21bf04304323370a68811f2bd19
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b94d6834aaa618882c2a15d02f0e928
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c5c44b2fbd836a91da9df2570b91320
publicationDate 2021-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2021083161-A1
titleOfInvention Semiconductor device
abstract An embodiment provides a semiconductor device comprising: a substrate; a semiconductor structure disposed on the substrate and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an activation layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a bonding layer disposed between the semiconductor structure and the substrate; a cover layer disposed between the bonding layer and the semiconductor structure; and an electrode pad disposed on the cover layer and spaced apart from the semiconductor structure, wherein: the semiconductor structure further comprises a stepped portion at which the lateral surface of the second conductive semiconductor layer, the lateral surface of the activation layer, and the lower surface of the first conductive semiconductor layer are exposed; the stepped portion is disposed at the outer portion of the semiconductor structure; and the cover layer is disposed to extend from a region vertically overlapping the electrode pad to a region vertically overlapping a part of the exposed lower surface of the first conductive semiconductor layer.
priorityDate 2018-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14784
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID448657308
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID57452119
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID71340508
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419524278
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID447855659
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID159451
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID157963928
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID57454248
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID166598
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID454108060
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID449992085
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID449464760
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID452010600
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID25199601
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID449871035

Total number of triples: 33.