Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b7886f9841c03e2449d28f454ebbe1dc |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
filingDate |
2020-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9953dfa09e270843ccc8fddbd24aa05a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b646744cec9f5b008976ed9cf0b2c9f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c34314a66fad9d190cbfebaa69b82d1 |
publicationDate |
2021-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2021054287-A1 |
titleOfInvention |
Formulations for high selective silicon nitride etch |
abstract |
Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures. |
priorityDate |
2019-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |