| abstract |
A silicon carbide semiconductor device includes a first doped region including a plurality of first leg portions, a plurality of body portions, and a plurality of first arm portions. The first leg portions are extending along a second direction, the body portions connect at least two of the first leg portions, and the first arm portions are extending along a first direction and connecting at least two of the first leg portions. A second doped region includes a plurality of second leg portions, a plurality of source portions, and a plurality of second arm portions. The second leg portions are extending along the second direction, the source portions are arranged in the body portions and connecting at least two of the second leg portions, and the second arm portions are extending along the first direction and connecting at least two of the second leg portions. |