| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-8003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-02372
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-09517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05569
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80948
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80907
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80896
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13147
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80986
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-09519
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80047
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-9202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-08145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-03616
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80011 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5386
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5385
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76805 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-538
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-065 |
| filingDate |
2020-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_860b78915d0b9bee60a103ff33c71621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55f458d34199152a5f7337399f9f5b0e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94479c67208c49e1118e5d356dc1ce8f |
| publicationDate |
2021-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2021043576-A1 |
| titleOfInvention |
Semiconductor structure and manufacturing method thereof |
| abstract |
A manufacturing method of a semiconductor structure includes at least the following steps. Forming a first portion includes forming a first patterned conductive pad with a first through hole on a first interconnect structure over a first semiconductor substrate; patterning a dielectric material over the first interconnect structure to form a first patterned dielectric layer with a first opening that passes through a portion of the dielectric material formed inside the first through hole to accessibly expose the first interconnect structure; and forming a conductive material inside the first opening and in contact with the first interconnect structure to form a first conductive connector laterally isolated from the first patterned conductive pad by the first patterned dielectric layer. A singulation process is performed to cut off the first patterned dielectric layer, the first interconnect structure, and the first semiconductor substrate to form a continuous sidewall of a semiconductor structure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I809757-B |
| priorityDate |
2019-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |