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filingDate 2018-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2021-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2021036103-A1
titleOfInvention Fabrication of lateral superjunction devices using selective epitaxy
abstract A lateral superjunction includes a substrate layer, a selective epitaxy layer deposited on the substrate layer, a trench formed into the selective epitaxy layer to expose a portion of the substrate layer, a first layer of semiconductor deposited in the trench, a second layer of semiconductor deposited adjacent to the first layer, and a first end layer of semiconductor deposited adjacent to the first layer of semiconductor and a second end layer of semiconductor deposited adjacent to the second layer of semiconductor.
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