Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b6caea61bfde8a45e01a8deabff80d97 |
classificationCPCAdditional |
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classificationCPCInventive |
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classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11582 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11556 |
filingDate |
2020-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_574de233d33e6c0acdbfac4b2811baa1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3438dc231aa01a3f7ce90f28568ee33f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_acee2aedae65067a83d2fc1bac774d00 |
publicationDate |
2021-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2021035965-A1 |
titleOfInvention |
Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer |
abstract |
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a carrier substrate. Memory stack structures vertically extend through the alternating stack. Each memory stack structure includes a respective vertical semiconductor channel and a respective memory film. The memory die can be bonded to a logic die containing peripheral circuitry for supporting operations of memory cells within the memory die. A distal end of each of the vertical semiconductor channels is physically exposed by removing the carrier substrate. A source layer is formed directly on the distal end each of the vertical semiconductor channels. A source power supply network can be formed on the backside of the source layer. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11257802-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11626416-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022336418-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11398451-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11776908-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022336366-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11424221-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022208748-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021320122-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11676954-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11552089-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022068819-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022059481-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113410253-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11302711-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022068820-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11532581-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11756934-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11688720-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11456290-B2 |
priorityDate |
2019-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |