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inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_574de233d33e6c0acdbfac4b2811baa1
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publicationDate 2021-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2021035965-A1
titleOfInvention Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer
abstract A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a carrier substrate. Memory stack structures vertically extend through the alternating stack. Each memory stack structure includes a respective vertical semiconductor channel and a respective memory film. The memory die can be bonded to a logic die containing peripheral circuitry for supporting operations of memory cells within the memory die. A distal end of each of the vertical semiconductor channels is physically exposed by removing the carrier substrate. A source layer is formed directly on the distal end each of the vertical semiconductor channels. A source power supply network can be formed on the backside of the source layer.
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