http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021035918-A1

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filingDate 2019-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ad1529bddff4ce70dc12fca863efc21
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publicationDate 2021-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2021035918-A1
titleOfInvention Semiconductor structure and fabrication method thereof
abstract A semiconductor structure includes a semiconductor substrate, a shielding structure, a ground terminal, and a through silicon via. The shielding structure is disposed over the semiconductor substrate and includes a first metal layer, a second metal layer, and a third metal layer. The first metal layer is disposed over the semiconductor substrate. The second metal layer is disposed over the first metal layer. The third metal layer is disposed over the second metal layer. The ground terminal is electrically connected to the third metal layer. The through silicon via is disposed over the semiconductor substrate and adjacent to the shielding structure.
priorityDate 2019-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 31.