| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cb4de7a760b993155169224c43cd2aeb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_705cd5e27fcb4f4260ea3793005181c7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2931d0010791f0d367fe026b10ef54e3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a42202873e685c9d940332b89dbbc5c5 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-761 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02233
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3171
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4916
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-291
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-761
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-761
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2020-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f423bcca68805f5c974d6d0d877a7f3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b4308982061111158927f7f1c14befe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd1c691fce0b3b916145321e0a099410 |
| publicationDate |
2021-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2021028167-A1 |
| titleOfInvention |
Analog integrated circuit with improved transistor lifetime and method for manufacturing the same |
| abstract |
In one aspect, a method for manufacturing an analog integrated circuit with improved transistor lifetime includes steps of: providing a P-type substrate; forming N+ source/drain regions; forming a P + isolation island to separate a high voltage I/O transistor and low voltage core transistor; patterning a SiON dielectric layer on one side of the P + isolation island for the high voltage I/O transistor; patterning a SiO 2 dielectric layer on the other side of the P + isolation island for the low voltage core transistor; forming a gate structure for the low voltage core transistor and high voltage I/O transistor; forming a gate polysilicon layer on a top portion of each of the SiO 2 and SiON dielectric layers; forming a SiON passivation layer with open holes; and forming a source electrode, a gate electrode and a drain electrode for each of the low voltage core transistor and high voltage I/O transistor. |
| priorityDate |
2019-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |