| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_432a72dc56167ec68f704994fd34cfba |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45531
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-10 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-10 |
| filingDate |
2019-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f0d68f651bc39c1741a5c19cf035151
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89fc8c173408fc576732532bc499904f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33780975bc5807bb91acc607ac385aa3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8dfe8c1aec28b9cd582c350cac5a9a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d007429376236c9cde3a11808c9c8ef |
| publicationDate |
2021-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2021024550-A1 |
| titleOfInvention |
SiC PRECURSOR COMPOUND AND THIN FILM FORMING METHOD USING THE SAME |
| abstract |
Provided is a SiC precursor for performing SiOCN thin film deposition and a method of forming SiOCN thin film, the method of forming thin film containing a silicon according to the subject matter is performed on a low temperature process that does not require a catalyst, and film deposition rate and process efficiency are excellent according to the subject matter. |
| priorityDate |
2018-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |