| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1089 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76871
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53209
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2019-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ccf414b8979ebb80c675f6c97d9a08b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8ac2a5842aea96cd48c4f67bc65fd07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1c04f1937cd9e2f0cede3a54d948279
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_888bf566a40c41db8955127fd1def57c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_447db7b46920f4de1271342f21a0bd81 |
| publicationDate |
2021-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2021020507-A1 |
| titleOfInvention |
Integrated circuit having a single damascene wiring network |
| abstract |
A method for fabricating a multi-layered wafer includes depositing a metal liner following by a seed layer including a metal in a trench arranged in an inter-metal dielectric (IMD). An end of the trench contacts a metal via of an interconnect structure. Heat is applied to drive the metal of the seed layer into the IMD and form a barrier layer along a sidewall of the trench. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11575017-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022399454-A1 |
| priorityDate |
2019-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |