http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021005445-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31155
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
filingDate 2019-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0dfc7c7f79ee56a0a853676023f73207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cff4c8afb111d068feb135013d27ab31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_53329f5ee7e971dc728ee7f9e4a1b317
publicationDate 2021-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2021005445-A1
titleOfInvention Techniques for reducing tip to tip shorting and critical dimension variation during nanoscale patterning
abstract A method of forming surface features in a hardmask layer, including etching a first surface feature into the hardmask layer, the first surface feature having a first critical dimension, performing an ion implantation process on the first surface feature to make the first surface feature resistant to subsequent etching processes, etching a second surface feature into the hardmask layer adjacent the first surface feature, wherein the first critical dimension is preserved.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11114299-B2
priorityDate 2019-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID410552837
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559581
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523132
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5462311
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID297
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6326954
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID139622
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559585

Total number of triples: 36.