http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021001383-A1

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filingDate 2020-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7160f9c530496ed49d3f7ea7066f5c4
publicationDate 2021-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2021001383-A1
titleOfInvention Cleaning method and plasma processing apparatus
abstract A cleaning method is provided. In the cleaning method, residues of elements of a group for a common semiconductor material in a chamber are removed with plasma of a halogen-containing gas. Residues of metal elements of groups 12 and 13 and groups 14 and 15 in the chamber are removed with plasma of a hydrocarbon-containing gas. A C-containing material in the chamber is removed with plasma of an O-containing gas. Further, the removing with the plasma of the halogen-containing gas, the removing with the plasma of the hydrocarbon-containing gas, and the removing with the plasma of the O-containing gas are performed in that order or the removing with the plasma of the hydrocarbon-containing gas, the removing with the plasma of the O-containing gas, and the removing with the plasma of the halogen-containing gas are performed in that order X times where X≥1.
priorityDate 2019-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 29.