| abstract |
The present application provides a Quantum Dot Light Emitting Diode (QDLED), comprising an anode, a p-type graphene layer, a hole injection layer, a quantum dot light-emitting layer and a cathode, the anode and the cathode is oppositely disposed, the quantum dot light-emitting layer is disposed between the anode and the cathode, the p-type graphene layer is disposed between the anode and the quantum dot light-emitting layer, and the hole transport layer is disposed between the p-type graphene layer and the quantum dot light-emitting layer, wherein the p-type graphene layer is made from p-type doped graphene, and the p-type doped graphene is at least one selected from a doped graphene via adsorption and a doped graphene via lattice. |